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Samsung Electronics Co., Ltd, a global leader in advanced semiconductor technology solutions, has developed the industry’s first monolithic four gigabit (Gb) LPDDR3 (low power double-data-rate 3) using 30 nanometer (nm) class* technology for high-end mobile applications such as smartphones and tablet PCs. LPDDR3 DRAM is needed to support faster processors, high resolution displays and 3D graphics in next generation mobile devices.
The new 4Gb LPDDR3 DRAM can transfer data at up to 1,600 megabits per second (Mbps), which is approximately 1.5 times faster than the industry’s current highest performance LPDDR2, which operates at 1,066Mbps. The new component also provides an enhanced performance-to-power ratio by consuming 20 percent less electrical power than its predecessor.
Also, by stacking two 4Gb chips, Samsung is enabling a single 1GB LPDDR3 package, with a data transmission rate up to 12.8 gigabytes (GB) per second. Starting next quarter, Samsung will begin sampling the 4Gb-based LPDDR3 chips to key mobile device providers. The chips are expected to be widely adopted next year in advanced mobile applications including nextgeneration smartphones and tablet PCs.
To accommodate the continually growing need for higher density mobile memory solutions to process large amount of data, the maximum amount of mobile DRAM in high-end mobile devices will grow from 1GB (8Gb) up to 2GB (16Gb) by early next year. These will available by stacking four 4Gb LPDDR3 chips.
According to industry research firm, the market for LPDDR3 DRAM will expand sharply in the year 2013. Samsung will be readying the market in advance by mass producing more components in 2012 therein encouraging faster adoption of premium mobile DRAM solutions throughout the mobile electronics industry.
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